Semiconductor laser

ABSTRACT

A semiconductor laser includes a light emission end facet; a first optical waveguide extending in a predetermined optical-axis direction, the first optical waveguide being optically coupled to the light emission end facet; a ring resonator having a plurality of periodic transmittance peak wavelengths, the ring resonator being optically coupled to the first optical waveguide; a plurality of gain waveguides that generate light by injection of current; an optical coupler portion that optically couples the first optical waveguide to each of the plurality of gain waveguides; and a plurality of second optical waveguides including diffraction gratings, the plurality of second optical waveguides being respectively optically coupled to the plurality of gain waveguides. Also, each of the diffraction gratings in the plurality of second optical waveguides has a different reflection band.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor laser.

2. Description of the Related Art

U.S. Pat. No. 4,896,325 discloses a wavelength tunable semiconductorlaser. In the wavelength tunable semiconductor laser, a gain region anda phase adjustment region are provided between two mirrors that arearranged at both ends. With the semiconductor laser described in U.S.Pat. No. 4,896,325, current is individually injected into the twomirrors at both ends, and reflection spectra of the two mirrors areadjusted, so that an emission wavelength is tuned.

SUMMARY OF THE INVENTION

However, to obtain laser oscillation, the current injected to themirrors has to be finely adjusted such that reflection peaks of the twomirrors are superposed on each other. In addition, the phase adjustmentregion is provided between the two mirrors to continuously tune thewavelength. Current injected into the phase adjustment region has alsoto be finely adjusted. Thus, it is hard and difficult to perform currentcontrol for the adjustment of the wavelength.

A semiconductor laser according to an aspect of the present inventionincludes a light emission end facet; a first optical waveguide extendingin a predetermined optical-axis direction, the first optical waveguidebeing optically coupled to the light emission end facet; a ringresonator having a plurality of periodic transmittance peak wavelengths,the ring resonator being optically coupled to the first opticalwaveguide; a plurality of gain waveguides that generate light byinjection of current; an optical coupler portion that optically couplesthe first optical waveguide to each of the plurality of gain waveguides;and a plurality of second optical waveguides including diffractiongratings, the plurality of second optical waveguides being respectivelyoptically coupled to the plurality of gain waveguides. Also, each of thediffraction gratings in the plurality of second optical waveguides has adifferent reflection band.

When current is injected into one of the plurality of gain waveguides,light is generated in the selected gain waveguide. Light propagatesthrough the selected gain waveguide and only light having a specificwavelength is selectively reflected by the diffraction grating in thesecond optical waveguide that is coupled to the selected gain waveguide.At this time, the wavelength or wavelength band of light that isreflected by a diffraction grating is determined by the period of thediffraction grating. The light propagates to the first optical waveguidethat is coupled through the optical coupler portion. The ring resonatoris optically coupled to the first optical waveguide. The ring resonatorhas a periodic wavelength-optical transmission characteristic and has apredetermined free spectral range (FSR). The wavelength width of atransmittance peak wavelength of the ring resonator can become smallerthan a reflection band of the diffraction grating. Accordingly, thewavelengths of light that propagates through the optical waveguide canbe further limited, and laser light having a single wavelength and asmall spectrum width can be obtained.

Also, in the semiconductor laser, each of the diffraction gratings inthe plurality of second optical waveguides has a different reflectionband. Accordingly, by injecting current selectively to one of the gainwaveguides and hence generating light, the emission wavelength can bedesirably determined. In particular, with the semiconductor laser, theoutput wavelength can be easily controlled without fine adjustment ofcurrent for wavelength control, unlike the wavelength tunable laserdescribed in U.S. Pat. No. 4,896,325.

Also in the semiconductor laser, the light emission end facet, at leastselected one of the plurality of gain waveguides, and the second opticalwaveguide that is optically coupled to the selected gain waveguideconstitute a laser cavity. The diffraction grating in the secondwaveguide functions as one reflection mirror of the laser cavity, andthe light emission end facet functions as the other reflection mirror.By selecting the gain waveguide to which the current is injected, fromthe plurality of gain waveguides, the gain waveguide and the secondoptical waveguide provided with the diffraction grating can be easilychanged. Then, laser cavity including the selected gain waveguide andthe second optical waveguide coupled to the selected gain waveguide canbe changed. Therefore, lasing wavelength may be easily changed.

Also, the semiconductor laser may further include a first mode converterregion arranged between the optical coupler portion and the gainwaveguides, the first mode converter region including an opticalwaveguide having a taper-shaped waveguide which width gradually changesin the predetermined optical-axis direction. With this semiconductorlaser, an optical waveguide loss that is resulted from the difference ofthe propagation modes and the distribution of the optical intensitiesbetween the optical coupler portion and the gain waveguide can bereduced.

Also, the semiconductor laser may further include a first phaseadjustment portion that controls an optical path length of the firstoptical waveguide. Alternatively, the semiconductor laser may furtherinclude a second phase adjustment portion that controls an optical pathlength between the optical coupler portion and each of the plurality ofsecond waveguides. With any of these configurations, the cavity lengthof the semiconductor laser can be changed, and the emission wavelength(longitudinal mode) of the semiconductor laser can be desirablyadjusted.

Also, the semiconductor laser may further include a second modeconverter region arranged between the first phase adjustment portion andthe ring resonator, the second mode converter region including anoptical waveguide having a taper-shaped waveguide which width graduallychanges in the predetermined optical-axis direction. With thissemiconductor laser, the optical waveguide loss that is resulted fromthe difference of the propagation modes and the distribution of theoptical intensities between the first phase adjustment portion and thering resonator can be reduced.

Also, in the semiconductor laser, the plurality of second opticalwaveguides may extend in the predetermined optical-axis direction andmay be arrayed in a direction intersecting with the predeterminedoptical-axis direction. Accordingly, the plurality of second opticalwaveguides and the diffraction gratings provided along the plurality ofsecond optical waveguides can be easily formed.

Also, in the semiconductor laser, the plurality of transmittance peakwavelengths of the ring resonator are included in reflection wavelengthbands of the diffraction gratings by one-to-one correspondence.Accordingly, the emission wavelength of light by the semiconductor lasercan be reliably controlled.

Also, in the semiconductor laser, each of the diffraction gratingsprovided in the second optical waveguides may have a differentreflection wavelength band. A wavelength interval of the centerwavelengths of the reflection wavelength bands of the diffractiongratings may be equal to an interval of the plurality of transmissionpeak wavelengths of the ring resonator. Accordingly, the emissionwavelength of light by the semiconductor laser can be reliablycontrolled.

Also, in the semiconductor laser, each of the diffraction gratingsprovided in the second optical waveguides may be a chirp diffractiongrating, or alternatively, each of the diffraction gratings provided inthe second optical waveguides may have a periodic structure with aconstant period.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view showing a configuration of a semiconductor laserthat serves as a semiconductor laser according to a first embodiment ofthe present invention.

FIG. 2 is a cross-sectional view taken along line II-II of thesemiconductor laser shown in FIG. 1.

FIG. 3A is a cross-sectional view taken along line IIIa-IIIa of thesemiconductor laser shown in FIG. 2, FIG. 3A representatively showing again waveguide included in a gain region.

FIG. 3B is a cross-sectional view taken along line IIIb-IIIb of thesemiconductor laser shown in FIG. 2, FIG. 3B representatively showing anoptical waveguide included in an optical reflector region.

FIG. 4A is a cross-sectional view taken along line IVa-IVa of thesemiconductor laser shown in FIG. 2, FIG. 4A showing a structure of aring resonator region.

FIG. 4B is a cross-sectional view taken along line IVb-IVb of thesemiconductor laser shown in FIG. 2, FIG. 4B showing a structure of aphase adjustment region.

FIG. 5 is a cross-sectional view taken along line V-V of thesemiconductor laser shown in FIG. 2, FIG. 5 showing a structure of amode converter region.

FIG. 6 illustrates a plan outline of an optical waveguide layer in themode converter region.

FIG. 7A is a graph showing an example of a transmission spectrumcharacteristic of a ring resonator provided in the ring resonatorregion.

FIG. 7B illustrates wavelength-reflectivity characteristics of theoptical reflector region, waveforms D1 to D4 respectively indicatingreflection characteristics in reflection wavelength bands of diffractiongratings that are provided along a number N of optical waveguides.

FIG. 8 is a plan view showing a configuration of a semiconductor laserthat serves as a semiconductor laser according to a second embodiment ofthe present invention.

FIG. 9A is a graph showing an example of a transmission spectrumcharacteristic of a ring resonator according to the second embodiment.

FIG. 9B illustrates wavelength-reflectivity characteristics of anoptical reflector region according to the second embodiment, waveformsD11 to D18 respectively indicating reflection characteristics inreflection wavelength bands of diffraction gratings that are providedalong eight optical waveguides.

FIG. 10 is a plan view showing a configuration of a semiconductor laserthat serves as a semiconductor laser according to a third embodiment ofthe present invention.

FIG. 11 illustrates a cross-section structure of a phase adjustmentregion according to the third embodiment, FIG. 11 representativelyshowing an optical waveguide included in a phase adjustment region.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Semiconductor lasers according to embodiments of the present inventionwill be described in detail below with reference to the attacheddrawings. It is to be noted that like reference signs refer likeelements when the description is given for the drawings, and redundantdescription is omitted.

First Embodiment

FIG. 1 is a plan view of a semiconductor laser 1A according to a firstembodiment of the present invention. FIG. 2 is a cross-sectional viewtaken along line II-II of the semiconductor laser 1A shown in FIG. 1.The semiconductor laser 1A is a wavelength tunable semiconductor laser.

Referring to FIGS. 1 and 2, the semiconductor laser 1A includes a lightemission end facet 4 a and an optical waveguide 3 (first opticalwaveguide) that is optically coupled to the light emission end facet 4a. In this embodiment, the light emission end facet 4 a is provided witha high reflection (HR) film 105. The optical waveguide 3 extends fromthe light emission end facet 4 a in a predetermined optical-axisdirection (waveguide direction). The light emission end facet 4 a may bea cleaved facet. A phase adjustment region (phase adjustment portion) 10a and a ring resonator region 10 b are provided along the opticalwaveguide 3. A ring resonator 20 is formed in the ring resonator region10 b and the ring resonator 20 is optically coupled to the opticalwaveguide 3. The phase adjustment region 10 a is a region forcontrolling the optical path length of the optical waveguide 3.

Also, the semiconductor laser 1A includes a number N of gain waveguides5 (N is an integer equal to or larger than 2, in this embodiment, N=4)that generate light by injection of current, and the number N of opticalwaveguides 6 (second optical waveguides) that are respectively opticallycoupled to the gain waveguides 5. Diffraction gratings with differentperiods are formed respectively in the N optical waveguides 6.Accordingly, reflection wavelengths and reflection bands of thesediffraction gratings are determined depending on the periods of thediffraction gratings, and hence the optical waveguides 6 have differentreflection wavelengths and different reflection bands from each other.

The N optical waveguides 6 are formed in an optical reflector region 10c. The N gain waveguides 5 are formed in a gain region 10 d that isprovided next to the optical reflector region 10 c. The N gainwaveguides 5 extend along the predetermined optical-axis direction inthe gain region 10 d, and are arrayed in a direction intersecting withthe predetermined optical-axis direction. Similarly, the N opticalwaveguides 6 extend along the predetermined optical-axis direction inthe optical reflector region 10 c, and are arrayed in the directionintersecting with the predetermined optical-axis direction.

The semiconductor laser 1A also includes an optical coupler portion 10e. The optical coupler portion 10 e optically couples the opticalwaveguide 3 to each of the N gain waveguides 5. The optical couplerportion 10 e may be, for example, a multimode interference (MMI)coupler, a Y-branched optical coupler, or a directional coupler.

The phase adjustment region 10 a, the ring resonator region 10 b, theoptical reflector region 10 c, the gain region 10 d, and the opticalcoupler portion 10 e are formed on a common semiconductor substrate 8 asshown in FIG. 2. The semiconductor substrate 8 is made of, for example,n-type indium phosphide (InP), and functions as a lower clad in thesemiconductor laser 1A. The semiconductor substrate 8 is mounted on acooling device 30 through a cathode electrode 9 provided on the backsurface of the semiconductor substrate 8. The cooling device 30maintains the temperature of the semiconductor substrate 8 and a layerstructure on the principal surface of the semiconductor substrate 8constant. The cooling device 30 may include, for example, a Peltierdevice.

FIG. 3A is a cross-sectional view taken along line IIIa-IIIa of thesemiconductor laser 1A shown in FIG. 2. FIG. 3A shows one of theplurality of gain waveguides 5 included in the gain region 10 d. All theN gain waveguides 5 included in the gain region 10 d have across-section structure similar to that shown in FIG. 3A. FIG. 3B is across-sectional view taken along line IIIb-IIIb of the semiconductorlaser 1A shown in FIG. 2. FIG. 3B shows one of the plurality of opticalwaveguides 6 included in the optical reflector region 10 c. All the Noptical waveguides 6 included in the optical reflector region 10 c havea cross-section structure similar to that shown in FIG. 3B. In FIGS. 3Aand 3B, the illustration of the cooling device 30 (FIG. 2) is omitted.

Referring to FIGS. 2 and 3A, the gain region 10 d includes an opticalwaveguide layer 110 provided on the semiconductor substrate 8, an uppercladding layer 112 provided on the optical waveguide layer 110, and acontact layer 113 provided on the upper cladding layer 112. The opticalwaveguide layer 110 constitutes the gain waveguide 5 shown in FIG. 1.The optical waveguide layer 110 is formed of a semiconductor having alarger band gap wavelength (i.e., having a smaller band gap energy) thana semiconductor of the semiconductor substrate 8. The optical waveguidelayer 110 extends in an optical waveguide direction along the principalsurface of the semiconductor substrate 8. The optical waveguide layer110 includes, for example, a lower optical confinement layer provided onthe semiconductor substrate 8, an active layer provided on the loweroptical confinement layer, and an upper optical confinement layerprovided on the active layer.

According to the embodiment, the lower and upper optical confinementlayers are made of undoped gallium indium arsenide phosphide (GaInAsP),and the active layer has a multi quantum well (MQW) structure ofGaInAsP. The active layer radiates light within a relatively widewavelength band. The composition of the active layer is adjusted togenerate light with a wavelength in a range from 1.52 to 1.57 μm. Theoptical waveguide layer 110 has a thickness of for example, 0.3 μm, anda length in the optical waveguide direction of, for example, 300 μm.

The upper cladding layer 112 is made of p-type InP, and the contactlayer 113 is made of p-type gallium indium arsenide (GaInAs). The uppercladding layer 112 and the contact layer 113 respectively havethicknesses of, for example, 2 μm and 0.2 μm.

The gain region 10 d has a stripe-shaped mesa structure including theoptical waveguide layer 110, the upper cladding layer 112, and thecontact layer 113 on the semiconductor substrate 8 (see FIG. 3A). Thestripe-shaped mesa structure extends in a predetermined opticalwaveguide direction. The stripe-shaped mesa structure has a width of,for example, 1.5 μm in a direction intersecting with the opticalwaveguide direction (i.e., the width here is a width in a directionorthogonal to the optical waveguide direction, the same can be saidhereinafter). A semi-insulating region 102 is provided on both sidesurfaces of the stripe-shaped mesa structure and on the semiconductorsubstrate 8. The semi-insulating region 102 is made of a semi-insulatingsemiconductor. For example, the semi-insulating semiconductor may beiron (Fe)-doped InP.

An anode electrode 114 is provided on the contact layer 113 in the gainregion 10 d. The anode electrode 114 is an ohmic electrode made of, forexample, titanium (Ti)/platinum (Pt)/gold (Au). Also, the cathodeelectrode 9 is provided on the back surface of the semiconductorsubstrate 8. The cathode electrode 9 is an ohmic electrode made of, forexample, gold germanium (AuGe). Current is injected into the opticalwaveguide layer 110 through the anode electrode 114 and the cathodeelectrode 9. It is to be noted that the region on the upper surface ofthe gain region 10 d not occupied by the anode electrode 114 is coveredwith an insulating film 11 that is made of, for example, silicon dioxide(SiO₂). The insulating film 11 has a thickness of, for example, 0.35

Referring to FIGS. 2 and 3B, the optical reflector region 10 c isprovided between an end facet 4 b and the optical waveguide layer 110 inthe gain region 10 d. The end facet 4 b is opposite to the lightemission end facet 4 a of the semiconductor laser 1A. The opticalreflector region 10 c includes an optical waveguide layer 120 providedon the semiconductor substrate 8, a diffraction grating layer 121provided on the optical waveguide layer 120, and an upper cladding layer122 provided on the diffraction grating layer 121. The optical waveguidelayer 120 constitutes the optical waveguide 6 shown in FIG. 1. Theoptical waveguide layer 120 has a smaller band gap wavelength than aband gap wavelength of the active layer in the gain region 10 d. Forexample, the band gap wavelength of the optical waveguide layer 120 is1.3 μm or smaller. Also, the optical waveguide layer 120 is formed of asemiconductor having a larger band gap wavelength than a band gapwavelength of the semiconductor substrate 8. The optical waveguide layer120 extends in the optical waveguide direction along the principalsurface of the semiconductor substrate 8, and is coupled to the opticalwaveguide layer 110 in the gain region 10 d.

Referring to FIGS. 1 and 2, an anti reflection (AR) film 106 is providedon an end facet of the optical reflector region 10 c in the opticalwaveguide direction (i.e., end facet 4 b). The AR film 106 has areflectivity of, for example, 0.1% or lower. The optical waveguide layer120 is coupled to the AR film 106.

The diffraction grating layer 121 is provided along the opticalwaveguide layer 120. In this embodiment, the diffraction grating layer121 is provided directly above the optical waveguide layer 120. Toeffectively confine light around the optical waveguide layer 120, theband gap wavelength of the diffraction grating layer 121 is preferablysmaller than the band gap wavelength of the optical waveguide layer 120.The diffraction grating layer 121 has band gap wavelength of, forexample, 1.2 μm.

A diffraction grating 121 a (see FIG. 2) having periodic projections andrecesses is formed at the interface between the diffraction gratinglayer 121 and the upper cladding layer 122. The diffraction grating 121a is provided along the optical waveguide layer 120. The diffractiongrating 121 a is a chirp diffraction grating having a grating intervalthat changes in the optical waveguide direction of the optical waveguidelayer 120.

According to the embodiment, the optical waveguide layer 120 and thediffraction grating layer 121 are made of undoped GaInAsP. The opticalwaveguide layer 120 and the diffraction grating layer 121 respectivelyhave thicknesses of, for example, 0.3 μm and 50 nm. Also, the uppercladding layer 122 is made of p-type InP. The upper cladding layer 122has a thickness of, for example, 2 μM. The optical waveguide layer 120has a length in the optical waveguide direction of, for example, 500 μm.

The optical reflector region 10 c has a stripe-shaped mesa structureincluding the optical waveguide layer 120, the diffraction grating layer121, and the upper cladding layer 122 on the semiconductor substrate 8(see FIG. 3B). Also, the stripe-shaped mesa structure of the opticalreflector region 10 c extends in the predetermined optical waveguidedirection like the stripe-shaped mesa structure of the gain region 10 d.The width of the stripe-shaped mesa structure in the directionintersecting with the optical waveguide direction is equivalent to thatof the stripe-shaped mesa structure of the gain region 10 d. Both sidesurfaces of the stripe-shaped mesa structure are buried by asemi-insulating region 102 that is commonly used for the gain region 10d.

FIG. 4A is a cross-sectional view taken along line IVa-IVa of thesemiconductor laser 1A shown in FIG. 2, FIG. 4A showing a structure ofthe ring resonator region 10 b. In FIG. 4A, the illustration of thecooling device 30 (FIG. 2) is omitted.

The ring resonator region 10 b includes the ring resonator 20. Awavelength-transmittance characteristic of the ring resonator 20periodically changes and has discrete transmittance peak wavelengths. Awavelength interval of the periodic transmittance peak wavelengths ofthe ring resonator is called free spectral range (FSR). Referring toFIGS. 2 and 4A, the ring resonator region 10 b includes an opticalwaveguide layer 131, an upper cladding layer 132, and a contact layer133 that are laminated on the semiconductor substrate 8 in that order.The ring resonator region 10 b also includes an anode electrode 134. Thecathode electrode 9 provided on the back surface of the semiconductorsubstrate 8 is also used for a cathode electrode in the ring resonatorregion 10 b.

The optical waveguide layer 131 is provided on the principal surface ofthe semiconductor substrate 8. The optical waveguide layer 131 functionsas an optical waveguide in the ring resonator region 10 b, andconstitutes part of the optical waveguide 3 of the semiconductor laser1A.

In the embodiment, the optical waveguide layer 131 is made of undopedGaInAsP, and has a thickness of, for example, 0.3 μm. The opticalwaveguide layer 131 has a smaller band gap wavelength than a band gapwavelength of the active layer in the gain region 10 d. For example, theband gap wavelength of the optical waveguide layer 131 is 1.3 μm orsmaller. The upper cladding layer 132 is made of p-type InP, and thecontact layer 133 is made of p-type GaInAs. The upper cladding layer 132and the contact layer 133 respectively have thicknesses of, for example,2 μm and 0.2 μm.

The ring resonator region 10 b has a mesa structure including theoptical waveguide layer 131, the upper cladding layer 132, and thecontact layer 133. The upper surface and both side surfaces of the mesastructure of the ring resonator region 10 b are covered with aninsulating film 13 made of, for example, SiO₂. An opening is formed inthe insulating film 13 at the upper surface of the mesa structure of thering resonator region 10 b to form an ohmic contact between the contactlayer 133 and the anode electrode 134. The insulating film 13 is alsoprovided on the principal surface of the semiconductor substrate 8. Theinsulating film 13 has a thickness of for example, 0.35 μm.

Further, a resin layer 15 is provided on the insulating film 13 toextend along both side surfaces of the mesa structure. The resin layer15 is made of, for example, benzocyclobutene (BCB) resin, and has athickness, for example, in a range from 1 to 2 vim.

The anode electrode 134 is provided on the contact layer 133, and is anohmic electrode made of, for example, gold zinc (AuZn). Current isinjected into the optical waveguide layer 131 in the ring resonatorregion 10 b through the anode electrode 134 and the cathode electrode 9.

The optical waveguide layer 131 has a refractive index that changes inaccordance with the magnitude of current to be injected. Hence, thetransmittance peak wavelength of the ring resonator 20 is shifted inaccordance with the magnitude of current that flows between the cathodeelectrode 9 and the anode electrode 134 while the FSR is maintained.

FIG. 4B is a cross-sectional view taken along line IVb-IVb of thesemiconductor laser 1A shown in FIG. 2, FIG. 4B showing a structure ofthe phase adjustment region 10 a. In FIG. 4B, the illustration of thecooling device 30 (FIG. 2) is omitted.

The phase adjustment region 10 a is a region for controlling the opticalpath length of the optical waveguide 3. The phase adjustment region 10 ais provided between the ring resonator region 10 b and the lightemission end facet 4 a. Referring to FIGS. 2 and 4B, the phaseadjustment region 10 a includes an optical waveguide layer 131, an uppercladding layer 132, and a contact layer 133 that are laminated on thesemiconductor substrate 8 in that order. The optical waveguide layer131, the upper cladding layer 132, and the contact layer 133 haveconfigurations (materials and thicknesses) similar to those in the ringresonator region 10 b. The phase adjustment region 10 a also includes ananode electrode 135.

The cathode electrode 9 provided on the back surface of thesemiconductor substrate 8 is also used for a cathode electrode in thephase adjustment region 10 a.

The optical waveguide layer 131 in the phase adjustment region 10 aconstitutes part of the optical waveguide 3 of the semiconductor laser1A. The optical waveguide layer 131 in the phase adjustment region 10 ahas a length in the optical waveguide direction of, for example, 100 μm.Referring to FIGS. 1 and 2, a high reflection (HR) film 105 is providedon an end facet of the phase adjustment region 10 a in the opticalwaveguide direction (i.e., the light emission end facet 4 a of thesemiconductor laser 1A). The HR film 105 has a reflectivity of, forexample, 90% or higher. The optical waveguide layer 131 in the phaseadjustment region 10 a is optically coupled to the HR film 105.

The phase adjustment region 10 a has a stripe-shaped mesa structureincluding an optical waveguide layer 131, an upper cladding layer 132,and a contact layer 133 (see FIG. 4B). The stripe-shaped mesa structureof the phase adjustment region 10 a extends in the predetermined opticalwaveguide direction. The stripe-shaped mesa structure has a width of,for example, 1.5 μm in the direction intersecting with the opticalwaveguide direction. A semi-insulating region 103 is provided on bothside surfaces of the stripe-shaped mesa structure and on thesemiconductor substrate 8. The semi-insulating region 103 is made of asemi-insulating semiconductor, for example, iron (Fe)-doped InP.

The anode electrode 135 is provided on the contact layer 133 in thephase adjustment region 10 a, and is an ohmic electrode made of amaterial containing, for example, AuZn. Current is injected into theoptical waveguide layer 131 in the phase adjustment region 10 a throughthe anode electrode 135 and the cathode electrode 9.

The optical waveguide layer 131 in the phase adjustment region 10 a hasa refractive index that changes in accordance with the magnitude ofcurrent that is injected between the cathode electrode 9 and the anodeelectrode 135. When the refractive index of the optical waveguide layer131 changes, the optical path length of the phase adjustment region 10 achanges. As the result, the cavity length of the entire semiconductorlaser 1A changes. Accordingly, by adjusting the injection amount ofcurrent to the optical waveguide layer 131 in the first phase adjustmentregion 10 a, the emission wavelength (longitudinal mode) of thesemiconductor laser 1A can be adjusted.

The semiconductor laser 1A of this embodiment further includes modeconverter regions 10 f and 10 g in addition to the above-describedconfigurations. The mode converter region 10 f is provided at theoptical waveguide 3 between the first phase adjustment region 10 a andthe ring resonator region 10 b. As described above, in the first phaseadjustment region 10 a of this embodiment, the side surfaces of thestripe-shaped mesa structure including the optical waveguide layer 131are buried by the semi-insulating region 103, which is thesemi-insulating semiconductor such as Fe-doped InP. In contrast, in thering resonator region 10 b, the side surfaces of the stripe-shaped mesastructure including the optical waveguide layer 131 are buried by theresin layer 15, such as BCB. Therefore, the phase adjustment region 10 ahas a distribution form of optical intensities within a planeperpendicular to the optical waveguide direction, the distribution formwhich is different from that of the ring resonator region 10 b. In otherwords, the propagation modes of light propagating in the first phaseadjustment region 10 a and the ring resonator region 10 b are different.Therefore, scattering of light occurs at an interface between the firstphase adjustment region 10 a and the ring resonator region 10 b. Then,an optical waveguide loss may be increased. The mode converter region 10f is provided to reduce an optical waveguide loss that is resulted fromthe difference of the propagation modes and the distribution of theoptical intensities between the first phase adjustment region 10 a andthe ring resonator region 10 b.

The mode converter region 10 g is provided between the optical couplerportion 10 e and the gain region 10 d. The mode converter region 10 gincludes the number N of optical waveguides 7 (see FIG. 1) that couplethe respective N gain waveguides 5 to the optical coupler portion 10 e.The optical coupler portion 10 e of this embodiment includes across-section structure similar to that of the ring resonator region 10b. However, the optical coupler portion 10 e does not include an anodeelectrode. In the optical coupler portion 10 e, side surfaces of astripe-shaped mesa structure including an optical waveguide layer areburied by a resin layer, such as BCB. In contrast, in the gain region 10d, the side surfaces of the stripe-shaped mesa structure including theoptical waveguide layer 110 are buried by the semi-insulating region102, which is the semi-insulating semiconductor such as Fe-doped InP.Accordingly, the optical coupler portion 10 e has a distribution form ofoptical intensities within a plane perpendicular to the opticalwaveguide direction, the distribution form which is different from thatof the gain region 10 d. Therefore, the propagation modes of lightpropagating in the optical coupler portion 10 e and the gain region 10 dare different. Therefore, scattering of light occurs at an interfacebetween the optical coupler portion 10 e and the gain region 10 d. Then,an optical waveguide loss may be increased. The mode converter region 10g is provided to reduce an optical waveguide loss that is resulted fromthe difference of the propagation modes and the distribution of theoptical intensities between the optical coupler portion 10 e and thegain region 10 d.

FIG. 5 is a cross-sectional view taken along line V-V of thesemiconductor laser 1A shown in FIG. 2, FIG. 5 showing a structure ofthe mode converter regions 10 f and 10 g. In FIG. 5, the illustration ofthe cooling device 30 (FIG. 2) is omitted. For the mode converter region10 g, one of the optical waveguides 7 included in the mode converterregion 10 g is representatively illustrated. All the N opticalwaveguides 7 included in the mode converter region 10 g have across-section structure similar to that of the illustrated opticalwaveguide 7.

Referring to FIGS. 2 and 5, each of the mode converter regions 10 f and10 g includes an optical waveguide layer 131 and an upper cladding layer132 that are laminated on the semiconductor substrate 8 in that order.The optical waveguide layer 131 in the mode converter region 10 fconstitutes part of the optical waveguide 3, and the optical waveguidelayer 131 in the mode converter region 10 g constitutes the opticalwaveguide 7. The optical waveguide layer 131 and the upper claddinglayer 132 have configurations (materials and thicknesses) similar tothose in the ring resonator region 10 b.

Each of the mode converter regions 10 f and 10 g has a mesa structureincluding the optical waveguide layer 131 and the upper cladding layer132 (see FIG. 5). The upper surface and both side surfaces of the mesastructure are covered with an insulating film 13. The insulating film 13is also provided on the principal surface of the semiconductor substrate8. Further, a resin layer 15 is provided on the insulating film 13 toextend along both side surfaces of the mesa structure.

FIG. 6 illustrates a plan outline of the optical waveguide layer 131 inthe mode converter region 10 g. It is to be noted that the opticalwaveguide layer 131 in the mode converter region 10 f has a similar planoutline as that in FIG. 6. Referring to FIG. 6, the optical waveguidelayer 131 in the mode converter region 10 g is arranged next to theoptical waveguide layer 110 in the gain region 10 d. Also, the opticalwaveguide layer 131 in the mode converter region 10 g includes a regionwith a constant optical waveguide width, and a region having ataper-shaped waveguide with a width gradually increasing toward theinterface with respect to the optical waveguide layer 110 in thewaveguide direction. Referring to FIG. 6, a width W1 that is theconstant optical waveguide width is, for example, 1.4 μm. A width W2 ofthe optical waveguide layer 131 at the interface with respect to theoptical waveguide layer 110 is, for example, 2.5 μm. A length L of thetapered portion of the optical waveguide layer 131 is, for example, 70μm. A width W3 of the optical waveguide layer 110 in the gain region 10d is, for example, 1.8 μm.

The operation of the semiconductor laser 1A having the above-describedconfigurations will be described. Current is supplied to a gainwaveguide 5 (hereinafter, named as selected gain waveguide 5) of the Ngain waveguides 5 (the optical waveguide layers 110) in the gain region10 d through the anode electrode 114. Light is generated in the selectedgain waveguide 5, to which the current is supplied. The light is guidedto the optical waveguide 6 that is coupled to the selected gainwaveguide 5, and is reflected by the diffraction grating that isprovided at the optical waveguide 6. Light with a predeterminedwavelength that is determined by the period of the diffraction gratingis selectively reflected. The light with the predetermined wavelengthpasses through the optical coupler portion 10 e, reaches the opticalwaveguide 3, passes through the ring resonator region 10 b and the firstphase adjustment region 10 a, and is reflected again by the lightemission end facet 4 a. The light is split by the optical couplerportion 10 e evenly to the N gain waveguides 5. Then, only the lightguided to the selected gain waveguide 5 is amplified. As the result, thediffraction grating that is provided at the optical waveguide 6 coupledto the selected gain waveguide 5, the selected gain waveguide 5 and thelight emission end facet 4 a constitute a laser cavity. Laseroscillation is obtained in the laser cavity including the selected gainwaveguide 5. Laser light is emitted from the light emission end facet 4a, passes through the HR film 105, and is output to the outside of thesemiconductor laser 1A.

FIG. 7A is a graph showing an example of a transmission spectrum of thering resonator 20 provided in the ring resonator region 10 b. In FIG.7A, the vertical axis plots an optical transmittance and the horizontalaxis plots a wavelength. Referring to FIG. 7A, the optical transmittanceperiodically changes with a predetermined FSR, and has discretetransmittance peak wavelengths λ₁ to λ₄. An FSR of a ring resonator isdetermined by an optical path length of a ring-like optical waveguidethat forms the ring resonator. Hence, the FSR of the ring resonator canbe changed by changing the optical path length. Regarding the ringresonator 20 having the transmission spectrum characteristic shown inFIG. 7A, an effective refractive index is 3.57 when current is notinjected, a coupling length of a multimode interference (MMI) couplerthat couples a ring-like waveguide to a straight waveguide is 15 μm, anda bend radius of the ring-like waveguide is 5 μm. In this case, the FSRis 11.1 nm.

FIG. 7B illustrates a wavelength-reflectivity characteristic of theoptical reflector region 10 c. Referring to FIG. 7B, waveforms D1 to D4indicate reflection characteristics in reflection wavelength bands ofthe diffraction gratings 121 a that are provided along the N opticalwaveguides 6. In this embodiment, center wavelengths λ₅ to λ₈ of thereflection wavelength bands of the diffraction gratings 121 a, which arerespectively provided at the N optical waveguides 6, are different fromone another. To be more specific, the waveform D1 of the centerwavelength λ₅ has reflectivities in a wavelength band from 1525 to 1535nm, the waveform D2 of the center wavelength λ₆ has reflectivities in awavelength band from 1535 to 1545 nm, the waveform D3 of the centerwavelength λ₇ has reflectivities in a wavelength band from 1545 to 1555nm, and the waveform D4 of the center wavelength λ₈ has reflectivitiesin a wavelength band from 1555 to 1565 nm.

In this embodiment, the periods of the diffraction gratings and theoptical path length of the ring-like optical waveguide that form thering resonator are determined such that the transmission peakwavelengths λ₁ to λ₄ of the ring resonator 20 are provided in thereflection wavelength bands of the diffraction gratings 121 a, which arerespectively provided at the N optical waveguides 6, by one-to-onecorrespondence. Also, in this embodiment, the wavelength interval of thecenter wavelengths λ₅ to λ₈ of the reflection wavelength bands of thediffraction gratings 121 a, which are respectively provided at the Noptical waveguides 6, are equivalent to the wavelength interval (i.e.,FSR) of the transmittance peak wavelengths λ₁ to λ₄ of the ringresonator 20.

Light that propagates through the optical waveguide in the semiconductorlaser 1A has a wavelength in the transmittance peak wavelengths λ₁ to λ₄of the transmission spectrum shown in FIG. 7A. Also, light thatpropagates through the optical waveguide in the semiconductor laser 1Ahas a wavelength in the waveforms D1 to D4 in FIG. 7B, i.e., has awavelength in the reflection wavelength band corresponding to theoptical waveguide 6 that is coupled to the selected gain waveguide 5.Accordingly, when current is supplied to the gain waveguide 5, which iscoupled to the optical waveguide 6 having the reflection characteristicof, for example, the waveform D1, the semiconductor laser 1A outputslaser light with the wavelength of λ₁.

In the semiconductor laser 1A, current is injected into one of the Ngain waveguides 5 as described above. As the result, light is generatedselectively at the gain waveguide 5 to which the current is supplied.The light is reflected by the diffraction grating 121 a formed at theoptical waveguide 6 coupled to the gain waveguide 5. At this time, thewavelength of light that is reflected by a diffraction grating isdetermined by the period of the diffraction grating 121 a. The lightreflected by the diffraction grating of the optical waveguide 6 isguided to the optical waveguide 3 through the optical coupler portion 10e. Also, the ring resonator 20 included in the optical waveguide 3 has aperiodic transmittance peak wavelength. The band width of the singletransmission peak of the ring resonator 20 can become narrower than thereflection band width of the diffraction grating 121 a. Thus, light thatpropagates through the laser cavity of the semiconductor laser 1A has asingle wavelength with a narrow spectrum width.

In the semiconductor laser 1A, the diffraction gratings 121 a which areprovided respectively along the N optical waveguides 6, have thedifferent center wavelengths λ₅ to λ₈ in the reflection wavelengthbands. Accordingly, by injecting current selectively to one of the Ngain waveguides 5 and hence generating light, the emission wavelengthcan be desirably determined. In particular, with the semiconductor laser1A, the output wavelength can be easily tuned without fine adjustment ofcurrent for wavelength control, unlike the wavelength tunable laserdescribed in U.S. Pat. No. 4,896,325.

Like this embodiment, the semiconductor laser 1A preferably includes thefirst phase adjustment region 10 a for controlling the optical pathlength of the optical waveguide 3. Accordingly, the length of the lasercavity of the semiconductor laser 1A can be changed. As the result, theemission wavelength (longitudinal mode) of the semiconductor laser 1Acan be desirably adjusted.

Like this embodiment, in the semiconductor laser 1A, the N opticalwaveguides 6 preferably extend in the predetermined direction and arearrayed in the direction intersecting with the predetermined direction.Accordingly, the N optical waveguides 6 and the diffraction gratings 121a, which are respectively provided along the optical waveguides 6, canbe easily formed.

Like this embodiment, the transmittance peak wavelengths λ₁ to λ₄ of thering resonator 20 are preferably included in the reflection waveformbands of the diffraction gratings 121 a, which are respectively providedat the N optical waveguides 6, by one-to-one correspondence. Also, thewavelength interval of the center wavelengths λ₅ to λ₈ of the reflectionwavelength bands of the diffraction gratins 121 a, which arerespectively provided at the N optical waveguides 6, is preferably equalto the FSR of the ring resonator 20. With this configuration, thewavelength and spectrum width of the light that propagates through thelaser cavity of the semiconductor laser 1A can be reliably controlled.That is, with the semiconductor laser 1A, laser light of a single modewith a markedly small spectrum width can be obtained.

Next, an example of a method for fabricating the semiconductor laser 1Awill be described. First, a semiconductor layer, which becomes theoptical waveguide layers 120 and 131, and a semiconductor layer, whichbecomes the diffraction grating layer 121 are grown on the semiconductorsubstrate 8 made of n-type InP by a epitaxial growth method such as ametal-organic chemical vapor deposition (MOCVD) method. Then, adiffraction grating pattern is formed on a resist by electron beamlithography. Then, the diffraction grating layer 121 is etched by dryetching by using the resist as an etching mask, so that the diffractiongrating 121 a is formed on the surface of the diffraction grating layer121. The resist is removed, and then a p-type InP layer is grown on thediffraction grating 121 a by, for example, the MOCVD method. Then, thediffraction grating 121 a is embedded in the p-type InP layer. Then, theupper cladding layers 122 and 132 are formed.

Then, the semiconductor layers grown on a region, which becomes the gainregion 10 d are removed by dry etching. Then, the optical waveguidelayers 110, which include the lower optical confinement layer, theactive layer having the multi quantum well (MQW) structure, and theupper optical confinement layer; and the upper cladding layers 112 aregrown on the removed regions of the semiconductor substrate bybutt-joint method.

Then, a semiconductor layer, which becomes the contact layers 113 and133, is grown by, for example, the MOCVD method. Then, portions of thecontact layers between regions on which the anode electrodes are formedare removed so that the anode electrodes are electrically isolated.

Then, the regions corresponding to the ring resonator region 10 b, theoptical coupler portion 10 e, the mode converter regions 10 f and 10 gare covered with a mask. Simultaneously, the regions corresponding tothe phase adjustment region 10 a, the optical reflector region 10 c, andgain region 10 d are covered with the mask such that only the portioncorresponding to the optical waveguide 3, the gain waveguides 5, and theoptical waveguide 6 are remained. The semiconductor layers in theregions corresponding to the phase adjustment region 10 a, the opticalreflector region 10 c are etched to a depth to reach the semiconductorsubstrate 8 by dry etching using the mask. In this etching process, theportions corresponding to the optical waveguide 3, the gain waveguides5, and the optical waveguide 6 are remained. Thus, the stripe-shapedmesa structure is formed. Then, both side surfaces of the mesa structureare buried by the semi-insulating regions 102 and 103, and the mask isremoved.

Then, the regions corresponding to the phase adjustment region 10 a, theoptical reflector region 10 c, and gain region 10 d are covered with amask. Simultaneously, the regions corresponding to the ring resonatorregion 10 b, the optical coupler portion 10 e, the mode converterregions 10 f and 10 g are covered with a mask while the portionscorresponding to the optical waveguides 3 and 7 are remained. Thesemiconductor layers in the regions corresponding to the ring resonatorregion 10 b, the optical coupler portion 10 e, the mode converterregions 10 f and 10 g are etched to a depth to reach the semiconductorsubstrate 8 by dry etching using the mask. In this etching process, theportions corresponding to the optical waveguides 3 and 7 are remained.Thus, the mesa structure is formed. Then, the insulating film composedof, for example, SiO₂ is deposited on both side surfaces of the mesastructure by a chemical vapor deposition (CVD) method. Thus, theinsulating film 13 is formed. Then, the BCB resin is formed on theinsulating film 13 by spin-coating method, and the BCB resin ishardened. Thus, the resin layer 15 is formed, and then the mask isremoved.

Then, the portions of the insulating films 13 and the resin layer 15where the anode electrodes are arranged are removed. Then, theinsulating film 11 composed of, for example, SiO₂ or SiN is deposited onthe entire surfaces of the phase adjustment region 10 a, the ringresonator region 10 b, the optical reflector region 10 c, the gainregion 10 d, the optical coupler portion 10 e, and the mode converterregions 10 f and 10 g by the CVD method. Etching is performed for theportions of the insulating film 11 where the anode electrodes arearranged until the contact layer is exposed. The openings are formed.Then, the anode electrodes 114, 134, and 135 are formed on the contactlayer at the openings by liftoff process. At this time, wiring andelectrode pads are also formed. In addition, the thickness of thesemiconductor substrate 8 is reduced to about 100 μm, for example, bypolishing the back surface of the semiconductor substrate 8. Then, thecathode electrode 9 is evaporated on the back surface of thesemiconductor substrate 8.

Finally, the semiconductor substrate 8 is cleaved in a bar-like shape,and hence a chip bar is formed. One cleaved facet of the chip bar iscoated with the HR film 105, and the other facet is coated with the ARfilm 106. Then, a plurality of laser chips included in the chip bar aredivided into individual laser chips. The divided laser chip is mountedon the cooling device 30. Accordingly, the semiconductor laser 1A iscompleted.

Second Embodiment

FIG. 8 is a plan view of a semiconductor laser 1B according to a secondembodiment of the present invention. The semiconductor laser 1B is awavelength tunable semiconductor laser.

The semiconductor laser 1B of this embodiment differs from thesemiconductor laser 1A of the first embodiment in the configuration ofthe optical reflector region. More specifically, in this embodiment, anoptical reflector region 10 h includes eight optical waveguides 16(second optical waveguides). The eight optical waveguides 16 arerespectively provided with diffraction gratings. Each of the diffractiongratings, which are respectively provided at the optical waveguides 16,has a periodic structure with a constant period. That is, thediffraction grating is not a chirp diffraction grating, unlike the firstembodiment. The diffraction gratings respectively provided at theoptical waveguides 16 are different from one another. Accordingly,center wavelengths of reflection wavelength bands of the diffractiongratings are different from one another. In each of the opticalwaveguides 16, light with a predetermined wavelength is reflected by adiffraction grating. The wavelength of light reflected by thediffraction grating is determined by the period of the diffractiongrating. The optical reflector region 10 h has a similar cross-sectionstructure to the structure of the optical reflector region 10 c of thefirst embodiment except that the number of optical waveguides isdifferent and the diffraction gratings have the different periodicstructures.

Also, the semiconductor laser 1B of this embodiment includes a gainregion 10 i and a mode converter region 10 j instead of the gain region10 d and the mode converter region 10 g of the first embodiment. Thegain region 10 i includes eight gain waveguides 5 to correspond to theoptical reflector region 10 h. Similarly, the mode converter region 10 jincludes eight optical waveguides 7 to correspond to the opticalreflector region 10 h. The structure of the gain waveguides 5 and thestructure of the optical waveguides 7 are similar to those of the firstembodiment.

The eight gain waveguides 5 extend along a predetermined direction inthe gain region 10 i, and are arrayed in a direction intersecting withthe predetermined direction. Similarly, the eight optical waveguides 16extend along the predetermined direction in the optical reflector region10 h, and are arrayed in the direction intersecting with thepredetermined direction.

The semiconductor laser 1B of this embodiment includes a first phaseadjustment region (phase adjustment portion) 10 a, a ring resonatorregion 10 b, an optical coupler portion 10 e, a mode converter region 10f, a HR film 105, and an AR film 106. The configurations of thesecomponents are similar to those of the first embodiment except for theFSR of a ring resonator 20 included in the ring resonator region 10 b.

FIG. 9A is a graph showing an example of a transmission spectrum of thering resonator 20 of this embodiment. In FIG. 9A, the vertical axisplots an optical transmittance and the horizontal axis plots awavelength. Referring to FIG. 9A, transmittance changes periodically.However, the transmission spectrum of the ring resonator 20 of thisembodiment has a smaller FSR than the FSR of the first embodiment. Also,the ring resonator 20 includes discrete transmittance peak wavelengthsλ₁₁ to λ₁₈. Regarding the ring resonator 20 having the transmissionspectrum characteristic shown in FIG. 9A, an effective refractive indexis 3.57 when current is not injected, a coupling length of a multimodeinterference (MAC) coupler that couples a ring-like waveguide to astraight waveguide is 34 μm, and a bend radius of the ring-likewaveguide is 10 μM. In this case, the FSR is 5.2 nm.

FIG. 9B illustrates a wavelength-reflectivity characteristic of theoptical reflector region 10 h of this embodiment. Waveforms D11 to D18indicate reflection characteristics of the diffraction gratings, whichare respectively provided along the eight optical waveguides 16. In thisembodiment, center wavelengths λ₂₁ to λ₂₈ of the reflection wavelengthbands of the diffraction gratings, which are respectively provided atthe eight optical waveguides 16, are different from one another.Further, since the diffraction gratings have the constant periods, thereflection wavelength band widths are smaller than those of the firstembodiment. Thus, the interval of the center wavelengths λ₂₁ to λ₂₈ issmaller than that of the first embodiment.

To be more specific, the waveform D11 of the center wavelength λ₂₁ hasreflectivities in a wavelength band from 1525 to 1530 nm, and thewaveform D12 of the center wavelength λ₂₂ has reflectivities in awavelength band from 1530 to 1535 nm. Similarly, reflectivities areshifted by about 5 nm each to the waveform D18 of the center waveformλ₂₈.

Also in this embodiment, the transmission peak wavelengths λ₂₁ to λ₂₈are included in the reflection waveform bands of the diffractiongratings, which are respectively provided at the eight opticalwaveguides 16, by one-to-one correspondence, by adjusting the periods ofthe diffraction gratings, the optical path length of the ring resonator20, etc. Also, the wavelength interval of the center wavelengths λ₂₁ toλ₂₈ of the reflection wavelength bands of the diffraction gratings,which are respectively provided at the eight optical waveguides 16, isequivalent to the wavelength interval (i.e., FSR) of the transmittancepeak wavelengths λ₂₁ to λ₂₈ of the ring resonator 20.

Light that propagates through the optical waveguide in the semiconductorlaser 1B has a wavelength in the transmittance peak wavelengths λ₂₁ toλ₂₈ of the transmission spectrum shown in FIG. 9A. Also, light thatpropagates through the optical waveguide in the semiconductor laser 1Bhas a wavelength in the waveforms D11 to D18 in FIG. 9B, i.e., has awavelength within the reflection wavelength band corresponding to theoptical waveguide 16 that is coupled to the selected gain waveguide 5.Accordingly, when current is supplied to the gain waveguide 5, which iscoupled to the optical waveguide 16 having the reflection characteristicof, for example, the waveform D11, from among the eight gain waveguides5, the semiconductor laser 1B outputs laser light with the wavelength ofλ₁₁.

With the semiconductor laser 1B of this embodiment, the emissionwavelength can be desirably determined by injecting current selectivelyinto one of the eight gain waveguides 5 and hence generating light, likethe semiconductor laser 1A of the first embodiment. In particular, withthe semiconductor laser 1B, the output wavelength can be easilycontrolled without fine adjustment of current for wavelength control.

In this embodiment, the semiconductor laser 1B includes the first phaseadjustment region 10 a. However, the phase adjustment region may beomitted.

Third Embodiment

FIG. 10 is a plan view of a semiconductor laser 1C according to a thirdembodiment of the present invention. The semiconductor laser 1C is awavelength tunable semiconductor laser.

The semiconductor laser 1C of this embodiment differs from thesemiconductor laser 1A of the first embodiment in the arrangement of thephase adjustment region. In particular, the semiconductor laser 1C ofthis embodiment includes a second phase adjustment region (phaseadjustment portion) 10 k instead of the first phase adjustment region 10a of the first embodiment. Referring to FIG. 10, the second phaseadjustment region 10 k is arranged between a gain region 10 d and a modeconverter region 10 g, and includes a number N (in this embodiment,four) of optical waveguides 12. The N optical waveguides 12 couple anumber N of gain waveguides 5 in the gain region 10 d respectively to anumber N of optical waveguides 7 in the mode converter region 10 g. Thesecond phase adjustment region 10 k controls optical path lengthsbetween an optical coupler portion 10 e and the respective N opticalwaveguides 6 in the optical reflector region 10 c by changing refractiveindices of the N optical waveguides 12.

FIG. 11 illustrates a cross-section structure of the second phaseadjustment region 10 k of this embodiment, FIG. 11 representativelyshowing an optical waveguide 12 included in the second phase adjustmentregion 10 k. All the N optical waveguides 12 included in the secondphase adjustment region 10 k have a cross-section structure similar tothat shown in FIG. 11.

Referring to FIG. 11, the second phase adjustment region 10 k includesan optical waveguide layer 131, an upper cladding layer 132, and acontact layer 133 that are laminated on the semiconductor substrate 8 inthat order. The optical waveguide layer 131, the upper cladding layer132, and the contact layer 133 have configurations (materials andthicknesses) similar to those in the first phase adjustment region 10 aof the first embodiment. Further, the second phase adjustment region 10k includes an anode electrode 138. The cathode electrode 9 provided onthe back surface of the semiconductor substrate 8 is also used for acathode electrode in the second phase adjustment region 10 k.

The optical waveguide layer 131 in the second phase adjustment region 10k constitutes the optical waveguide 12 shown in FIG. 10. The opticalwaveguide layer 131 in the second phase adjustment region 10 k isintegrally formed with the optical waveguide layer 131 (see FIG. 5) inthe adjacent mode converter region 10 g. An end portion of the opticalwaveguide layer 131 is optically coupled to the optical waveguide layer110 in the gain region 10 d.

The second phase adjustment region 10 k has a stripe-shaped mesastructure including the optical waveguide layer 131, the upper claddinglayer 132, and the contact layer 133. The stripe-shaped mesa structureextends in a predetermined optical waveguide direction. Thestripe-shaped mesa structure has a width of, for example, 1.5 μm in adirection intersecting with the optical waveguide direction. Asemi-insulating region 102 is provided on both side surfaces of thestripe-shaped mesa structure and on the semiconductor substrate 8.

An anode electrode 138 is provided on the contact layer 133 of thesecond phase adjustment region 10 k, and is an ohmic electrode made of,for example, AuZn. Current is injected into the optical waveguide layer131 in the second phase adjustment region 10 k through the anodeelectrode 138 and the cathode electrode 9.

The optical waveguide layer 131 in the second phase adjustment region 10k has a refractive index that changes in accordance with the magnitudeof current that is injected through the cathode electrode 9 and theanode electrode 138. With this change in refractive index of the opticalwaveguide layer 131, the optical path length of the optical waveguide 12in the second phase adjustment region 10 k is changed. As the result,the cavity length of the semiconductor laser 1C is changed. Accordingly,by adjusting the injection amount of current to the optical waveguidelayer 131 in the second phase adjustment region 10 k, the emissionwavelength (longitudinal mode) of the semiconductor laser 1C can beadjusted.

With the semiconductor laser 1C of this embodiment, the emissionwavelength can be desirably determined by injecting current selectivelyinto one of the N gain waveguides 5 and hence generating light, like thesemiconductor laser 1A of the first embodiment. In particular, with thesemiconductor laser 1C, the output wavelength can be easily controlledwithout fine adjustment of current for wavelength control.

The semiconductor laser according to the present invention is notlimited to the above described embodiments, and may be modified invarious ways. For example, in the above embodiments, the semiconductorsubstrate and the respective semiconductor layers use the InP-basedcompound semiconductor. However, the configuration of the presentinvention can be preferably realized even with the other group III-Vsemiconductor such as a GaAs-based compound semiconductor. Also, in theabove embodiments, the configuration of the optical waveguide uses thestripe-shaped mesa structure. However, the optical waveguide may use theother configuration such as ridge type. Even with such an opticalwaveguide, the advantages of the present invention can be desirablyattained.

The principle of the present invention has been illustrated anddescribed according to the preferable embodiment. However, the personsskilled in the art should recognize that the details of the embodimentcan be modified without departing from the principle. Therefore, weclaim the benefits obtained by all corrections and modifications madewithin the scope of the claims and the scope of the spirit of thepresent invention.

1. A semiconductor laser, comprising: a light emission end facet; afirst optical waveguide extending in a predetermined optical-axisdirection, the first optical waveguide being optically coupled to thelight emission end facet; a ring resonator having a plurality ofperiodic transmittance peak wavelengths, the ring resonator beingoptically coupled to the first optical waveguide; a plurality of gainwaveguides that generate light by injection of current; an opticalcoupler portion that optically couples the first optical waveguide toeach of the plurality of gain waveguides; and a plurality of secondoptical waveguides including diffraction gratings, the plurality ofsecond optical waveguides being respectively optically coupled to theplurality of gain waveguides, wherein each of the diffraction gratingsin the plurality of second optical waveguides has a different reflectionband.
 2. The semiconductor laser according to claim 1, wherein the lightemission end facet, at least selected one of the plurality of gainwaveguides, and the second optical waveguide that is optically coupledto the selected gain waveguide constitute a laser cavity.
 3. Thesemiconductor laser according to claim 1, further comprising a firstmode converter region arranged between the optical coupler portion andthe gain waveguides, the first mode converter region including anoptical waveguide having a taper-shaped waveguide which width graduallychanges in the predetermined optical-axis direction.
 4. Thesemiconductor laser according to claim 1, further comprising a firstphase adjustment portion that controls an optical path length of thefirst optical waveguide.
 5. The semiconductor laser according to claim4, further comprising a second mode converter region arranged betweenthe first phase adjustment portion and the ring resonator, the secondmode converter region including an optical waveguide having ataper-shaped waveguide which width gradually changes in thepredetermined optical-axis direction.
 6. The semiconductor laseraccording to claim 1, further comprising a second phase adjustmentportion that controls an optical path length between the optical couplerportion and each of the plurality of second optical waveguides.
 7. Thesemiconductor laser according to claim 1, wherein the plurality ofsecond optical waveguides extend in the predetermined optical-axisdirection and are arrayed in a direction intersecting with thepredetermined optical-axis direction.
 8. The semiconductor laseraccording to claim 1, wherein the plurality of transmittance peakwavelengths of the ring resonator are included in reflection wavelengthbands of the diffraction gratings by one-to-one correspondence.
 9. Thesemiconductor laser according to claim 1, wherein each of thediffraction gratings provided in the second optical waveguides has adifferent reflection wavelength band, and a wavelength interval of thecenter wavelengths of the reflection wavelength bands of the diffractiongratings is equal to an interval of the plurality of transmission peakwavelengths of the ring resonator.
 10. The semiconductor laser accordingto claim 1, wherein each of the diffraction gratings provided in thesecond optical waveguides is a chirp diffraction grating.
 11. Thesemiconductor laser according to claim 1, wherein each of thediffraction gratings provided in the second optical waveguides has aperiodic structure with a constant period.